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High conversion gain 10-GHz narrow-band photoreceiver with a flip-chip mounted 1.55 µm waveguide photodiode

Schmalbandiger 10-GHz PHotoempfänger mit hohem Konversionsfaktor und einer Flip-Chip-montierter 1,55 µm Wellenleiterphotodiode
: Sohn, J.; Leven, A.; Hurm, V.; Walcher, H.; Benz, W.; Kuri, M.; Massler, H.; Bronner, W.; Hülsmann, A.; Köhler, K.; Rosenzweig, J.; Schlechtweg, M.

IEEE Lasers and Electro-Optics Society:
LEOS 2001. The 14th Annual Meeting of the IEEE Lasers & Electro-Optics Society. Post deadline papers : Hyatt Regency La Jolla, San Diego, CA. 2001 IEEE/LEOS annual meeting conference proceedings
Piscataway, NJ: IEEE, 2001
ISSN: 1092-8081
IEEE Lasers and Electro-Optics Society (Annual Meeting) <14, 2001, San Diego/Calif.>
Fraunhofer IAF ()
integrated optoelectronics; integrierte Optoelektronik; photoreceiver; Photoempfänger; waveguide photodiode; Wellenleiterphotodiode; HEMT; flip-chip mounting; Flip-Chip-Montage; optoelectronic conversion gain; optoelektronischer Konversionsfaktor; noise; Rauschen

The photoreceiver is a key component for microwave fiber optic links and optoelectronic generation of microwave and millimeter-wave in phased array antennas for radar systems. The narrow-band photoreceiver at 10 GHz, developed in this work, consists of a multimode waveguide photodiode grown on InP substrate and an electrical amplifier with GaAs pseudomorphic HEMTs (pHEMTs). The photoreceiver with a monolithically integrated surface illuminated photodiode has been investigated earlier. In this work, however, the photodiode is replaced by a flip-chip mounted waveguide photodiode. The waveguide photodiode has a three times higher responsivity (1 A/W) that that of a surface illuminated photodiode (0.34 A/W), which results in a considerably higher signal-to-noise ratio. This enables fabrication of high optoelectronic conversion gain and low noise photoreceivers.