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Design of narrow-band photoreceivers by means of the photodiode intrinsic conductance

Entwurf schmalbandiger Photoempfänger mit Hilfe des intrinsischen Leitwerts der Photodiode
: Leven, A.; Hurm, V.; Reuter, R.; Rosenzweig, J.


IEEE transactions on microwave theory and techniques 49 (2001), Nr.10, S.1908-1913
ISSN: 0018-9480
Fraunhofer IAF ()
integrated optoelectronics; integrierte Optoelektronik; noise; Rauschen; photoreceiver; Photoempfänger; Pin-Photodiode; HEMT; monolithic integration; monolithische Integration; optoelectronic conversion gain; optoelektronischer Konversionsfaktor

The photodiode intrinsic conductance is a versatile parameter for designing photoreceivers used in light-wave-microwave systems. A short review is given on how the transimpedance and equivalent input noise current of an optical receiver can be calculated. The design of monolithically integrated narrow-band photoreceivers for microwave-via-fiber applications at 10 GHz is demonstrated. The photoreceivers were fabricated using GaAs-based pseudomorphic high electron-mobility transistor monolithically integrated with metamorphic InGaAs photodiodes. For such a photoreceiver, a very low equivalent input noise current of 5.7 pA per square-root hertz and a high optoelectronic conversion gain of 64.1 dBV/W were measure in good agreement with simulations.