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High-k: Latest developments and perspectives

 
: Bauer, A.J.; Lemberger, M.; Erlbacher, T.; Weinreich, W.

:

Lerch, W.:
Rapid thermal processing and beyond: Applications in semiconductor processing : Special topic volume; Selected papers from RTP specialists all over the world, Dornstadt, Germany
Stafa-Zurich: Trans Tech Publications, 2008 (Materials Science Forum 573-574)
ISBN: 0-87849-391-3
ISBN: 978-0-87849-391-3
S.165-180
Englisch
Aufsatz in Buch
Fraunhofer IISB ()
Fraunhofer CNT ()
high-k; Hf-silicate; interface layer; capping layer; SONOS; memory

Abstract
The paper reviews recent progress and current challenges in implementing high-k dielectrics in microelectronics. Logic devices, non-volatile-memories, DRAMs and low power mixed-signal components are found to be the technologies where high-k dielectrics are implemented or will be introduced soon. Two gate architectures have to be considerd: MOS with metal as gate electrode and MIM. In particular, Hf-silicates for logic and NVM devices in conventional MOS architecture and ZrO2 for DRAM cells in MIM architecture are discussed.

: http://publica.fraunhofer.de/dokumente/N-76623.html