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Evaluation of micro structured glass layers as dielectric-and passivation material for wafer level integrated thin film capacitors and resistors

: Zoschke, K.; Feige, C.; Wolf, J.; Mund, D.; Töpper, M.; Ehrmann, O.; Schmückle, F.J.; Reichl, H.


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Components, Packaging, and Manufacturing Technology Society:
ECTC 2007, the 57th Electronic Components and Technology Conference. Proceedings. Vol.2 : Sparks, NV, 29 May - June 1, 2007
Piscataway, NJ: IEEE Service Center, 2007
ISBN: 1-424-40985-3
ISBN: 1-424-40984-5
Electronic Components and Technology Conference (ECTC) <57, 2007, Reno/Nev.>
Fraunhofer IZM ()

This work describes the integration of thin micro-structured glass layers into copper / benzocyclobutene (Cu/BCB) thin film multi layer. The glass, which is deposited by a low temperature PVD-PIAD process (physical vapor deposition with plasma ion assisted deposition) using special synthesized targets, was evaluated to act as local dielectric and passivation material for integrated capacitors and resistors. Metal-insulator-metal (MIM) capacitors and micro strip resonators were realized to determine the breakdown voltage as well as the dielectric constant of the material. Furthermore the glass material was used as passivation for integrated nickel-chromium (NiCr) resistors, which were evaluated regarding their maximum applicable current density, temperature coefficient of resistance as well as long-term stability. The first chapters of this paper describe the glass deposition and structuring as well as the integration of these processes into the Cu/BCB redistribution process of Fraunhofer IZM. Afterwards the fabrication of the test structures and the results from their characterization are discussed in detail.