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Recent improvements in the integration of field emitters into scanning probe microscopy sensors

Barriereinhomogenitäten bei Wolfram-Schottky-Dioden auf 4H-SiC
: Beuer, S.; Rommel, M.; Petersen, S.; Amon, B.; Sulzbach, T.; Engl, W.; Bauer, A.J.; Ryssel, H.


Kristensen, A.:
33rd International Conference on Micro- and Nano-Engineering 2007. Proceedings : 23-26 September 2007, Copenhagen, Denmark
Amsterdam: Elsevier, 2008 (Microelectronic engineering 85.2008, Nr.5-6)
International Conference on Micro- and Nano-Engineering (MNE) <33, 2007, Copenhagen>
Konferenzbeitrag, Zeitschriftenaufsatz
Fraunhofer IISB ()
integrated field emitter; SPM sensor; EBID carbon; Schottky barrier; tungsten; silicon carbide; inhomogeneities

Recent improvements in the fabrication of integrated field emitters with a control electrode into scanning probe microscopy sensors are presented and discussed. Compared to earlier work the precursor material for the electron beam induced deposition of the emitter was changed from a Pt precursor ((CH3C5H4)Pt(CH3)3) to a C precursor (C14H10) which leads to a higher process yield and an improved process stability. The change of the material for the control electrode from Pt to Cr results in better compatibility to standard semiconductor processing. The field emitter devices were fabricated by focused charged particle beam processing revealing emission currents of 0.8 lA/tip for gate voltages of about 65 V. Possible reasons for the high turn-on voltages Vto were investigated by high resolution transmission electron microscopy combined with EDX analyses and approaches for reducing Vto are presented.