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Investigation on gettering of impurities during phosphorus diffusion in multicrystalline silicon

: Schwaderer, D.; Riepe, S.; Habenicht, H.; Schultz, O.; Warta, W.

Volltext urn:nbn:de:0011-n-735253 (107 KByte PDF)
MD5 Fingerprint: eeb3fee07645654cb6fc4a2a557d188a
Erstellt am: 22.9.2012

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

This work the influence on the gettering efficiency of varying cooling down ramps following a phosphorus-emitter-diffusion in a high-efficiency solar cell process is investigated. A hold-time ramp is applied at low temperature where the emitter sheet resistance remains nearly unchanged and recombination active defects are still mobile. We observed a significant enhancement of the effective minority carrier lifetime measured by the Carrier Density Imaging (CDI) and Quasi Steady State Photoconductance (QSSPC) methods. This improvement is explained by an increased diffusion of metal impurities into the gettering layer and by formation or growth of precipitates due to a lower solubility of impurities in silicon at low temperatures.