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Plasma texturing of low-defect epitaxial layers

: Lindekugel, S.; Schmich, E.; Janz, S.; Reber, S.

Volltext urn:nbn:de:0011-n-735034 (376 KByte PDF)
MD5 Fingerprint: fecdcefd036aa8468b79f90f0604b992
Erstellt am: 29.9.2012

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In this paper new texturing processes for epitaxial Si layers and float zone (FZ) Si wafers are presented. The texturing was performed in an in-line plasma etching process. With the introduction of ammonia as a new process gas, smooth surfaces with low defect concentration have been homogeneously structured. The results were half spherical structures. On FZ-Si, a halving of the measured spectral reflectance was achieved and the percentage of diffuse reflected light was drastically increased. On surfaces with different crystalline orientations such as the Recrystallized Wafer-Equivalent, a uniformly distributed texture was achieved.