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Plasma texturing of low-defect epitaxial layers

 
: Lindekugel, S.; Schmich, E.; Janz, S.; Reber, S.

:
Volltext urn:nbn:de:0011-n-735034 (376 KByte PDF)
MD5 Fingerprint: fecdcefd036aa8468b79f90f0604b992
Erstellt am: 29.9.2012


European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
S.1986-1989
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
In this paper new texturing processes for epitaxial Si layers and float zone (FZ) Si wafers are presented. The texturing was performed in an in-line plasma etching process. With the introduction of ammonia as a new process gas, smooth surfaces with low defect concentration have been homogeneously structured. The results were half spherical structures. On FZ-Si, a halving of the measured spectral reflectance was achieved and the percentage of diffuse reflected light was drastically increased. On surfaces with different crystalline orientations such as the Recrystallized Wafer-Equivalent, a uniformly distributed texture was achieved.

: http://publica.fraunhofer.de/dokumente/N-73503.html