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Detailed studies of manganese in silicon using lifetime spectroscopy and deep-level transient spectroscopy

: Rosenits, P.; Roth, T.; Diez, S.; Macdonald, D.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-734975 (423 KByte PDF)
MD5 Fingerprint: de3bd0610481d2fdd4e19b38572ac61e
Erstellt am: 21.9.2012

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Different characterisation methods, particularly injection-dependent lifetime spectroscopy (IDLS), deep-level transient spectroscopy (DLTS) and temperature-dependent lifetime spectroscopy (TDLS), have been applied to investigate the defect parameters of manganese in silicon. The results of the two latter methods are presented in this paper. Special interest lay in the study of the manganese-boron pairs which could be detected by means of DLTS at low temperatures in the samples. They have been dissociated optically and thermally and subsequently analysed with lifetime spectroscopy. Furthermore the recombination-dominating defect level of interstitial manganese in silicon could be determined for the first time.