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Analysing lateral inhomogeneities of silicon solar cells using a quasi 3D circuit simulation tool based on SPICE

: Grote, D.; Kasemann, M.; Hermle, M.; Warta, W.

Volltext urn:nbn:de:0011-n-734710 (145 KByte PDF)
MD5 Fingerprint: e4c14d6aff617d1d05cd5e81c8c564fb
Erstellt am: 21.9.2012

European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 22nd European Photovoltaic Solar Energy Conference, EU PVSEC 2007. Proceedings of the international conference. CD-ROM : Held in Milan, Italy, 3 - 7 September 2007
München: WIP-Renewable Energies, 2007
ISBN: 3-936338-22-1
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <22, 2007, Milano>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

An optimised quasi 3D network model of a solar cell has been developed. The network consists of resistances representing the emitter, the front side metallisation and the contact between metal and semiconductor, and of two diodes and a current source at each node or alternatively of devices based on a table containing local dark or illuminated IV-data. As simulation software a SPICE derivative is used. In the first part of this contribution the design of the network model is described, followed by an analysis of the required resolution of the network model and a test of its consistency. As an application example the network model is used to analyse the influence of a different number of shunts with different character and position on the cell area on global IV characteristic parameters and on local voltage distributions.