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Modelling of intrinsic aluminum diffusion for future power devices

Modellierung der intrinsischen Diffusion von Aluminium für zukünftige Leistungshalbleiter
: Krause, O.; Pichler, P.; Ryssel, H.

Lane, W.A. ; National Microelectronics Research Centre -NMRC-, Cork:
30th European Solid-State Device Research Conference 2000. Proceedings : Cork, Ireland, 11 - 13 September 2000
Paris: Editions Frontieres, 2000
ISBN: 2-86332-248-6
European Solid-State Device Research Conference (ESSDERC) <30, 2000, Cork>
Fraunhofer IIS B ( IISB) ()
aluminium; silicium; diffusion

Aluminum as the fastest diffusing acceptor dopant is commonly used for the fabrication of silicon-based power semiconductors with p/n-junctions depths ranging from microns to more than hundred micron. Although used since long, its diffusion behavior is not sufficiently characterized to support computer-aided-design of new devices. Since modern processes are rather based on low temperatures, the inert diffusion of aluminum was investigated in the temperature range from 850 to 1100 °C. Combining nitridation and oxidation experiments, the fractional diffusivity via self-interstitials was determined.