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Recessed gate processing for GaN/AlGaN-HEMTs

 
: Pletschen, W.; Kiefer, R.; Raynor, B.; Müller, S.; Benkhelifa, F.; Quay, R.; Mikulla, M.; Schlechtweg, M.; Weimann, G.

Abernathy, C.R. ; Materials Research Society -MRS-:
Advances in III-V nitride semiconductor materials and devices : November 27 - December 1, 2006, Boston, Massachusetts, USA; At the 2006 MRS Fall Meeting
Warrendale, Pa.: MRS, 2007 (Materials Research Society Symposium Proceedings 955)
ISBN: 978-1-604-23411-4
ISSN: 0272-9172
S.225-228
Materials Research Society (Fall Meeting) <2006, Boston/Mass.>
Symposium "Advances in III-V Nitride Semiconductor Materials and Devices" <2006, Boston/Mass.>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()

Abstract
A dry etch process based on Cl2/SF6 has been developed to selectively remove GaN over AlGaN for the fabrication of recessed gate GaN/AlGaN HEMTs. Using this etching process recessed and non-recessed FETs were fabricated side by side on the same wafer to provide a fair comparision of data. Recessed gate FETs with a gatelength of 0.15µm show cutoff frequencies of 83 and more than 200 GHz for fT and fmax, respectively. Furthermore, gate-drain breakdown as high as 84V has been obtained which is more than twice as much compared to their non-recessed counterparts.

: http://publica.fraunhofer.de/dokumente/N-71783.html