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A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion

Ein reduzierter Ansatz zur Modellierung des Einflusses von Nanoclustern und {113}-Defekten auf die transiente Diffusion
: Stiebel, D.; Pichler, P.; Cowern, N.E.B.

Volltext urn:nbn:de:0011-n-70788 (30 KByte PDF)
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Copyright AIP
Erstellt am: 7.2.2015

Applied Physics Letters 79 (2001), Nr.16, S.2654-2656
ISSN: 0003-6951
ISSN: 1077-3118
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IIS B ( IISB) ()
silicium; Punktdefekt; makroskopischer Defekt; Nanocluster; {113-Defetke}; transiente Diffusion

To simulate transient enhanced diffusion (TED) of dopants after ion implantation, a very accurate model for the interaction of self interstitials with extended defects is indispensable. Recently, such a model has been published by Cowern including the formation of {113} defects via small selfü interstitial clusters. Extracted from experimental results, this continuum model consists of a large set of coupled differential equations and, consequently, simulation times are rather high. In this letter, we present a model based on only seven differential equations leading to almost identical results in comparison to those of the original model. The reduction obtained will allow the application of the clustering model for the simulation of TED in commercial software tool.