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Optimizing edge topography of alternating phase shift masks using rigorous mask modelling

: Friedrich, C.; Mader, L.; Erdmann, A.; List, S.; Gordon, R.; Kalus, C.; Griesinger, U.; Pforr, R.; Mathuni, J.; Ruhl, G.; Maurer, W.

Progler, C.J. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Optical microlithography XIII : 1 - 3 March 2000, Santa Clara, California
Bellingham/Wash.: SPIE, 2000 (SPIE Proceedings Series 4000)
ISBN: 0-8194-3618-6
Optical Microlithography Conference <13, 2000, Santa Clara/Calif.>
Fraunhofer IIS B ( IISB) ()
topography; simulation; alternating phase shift mask; defect; intensity balancing

This paper describes mask topography effects of alternating phase shift masks for DUV lithography. First two options to achieve intensity balancing are discussed. Global phase errors of +-10° cause a CD change of 3 nm and 8 nm CD placement errors. The CD placement appears to be the parameter affected most by phase errors. A sloped quartz edge with an angle of 3° causes a CD change of 10 nm. The CD sensitivity on local phase errors, i. e. quartz bumps or holes was also studied. The critical defect size of a quartz bump was seen to be 180 nm (5 x) for 150 nm technology. For the investigation the recently developed topography simulator T-Mask was used. The simulator was first checked against analytical tests and experimental results.