Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

The impact of exposure induced refractive index changes of photoresists on the photolithographic process

: Erdmann, A.; Henderson, C.L.; Willson, C.G.


Journal of applied physics 89 (2001), Nr.12, S.8163-8169
ISSN: 0021-8979
ISSN: 1089-7550
Fraunhofer IIS B ( IISB) ()
Mikrolithographie; simulation; photoresist; Selbstfokusierung

In many commercial and non-commercial photoresists the real and the imaginary parts of the refractive index are changed during exposure. Using a finite-difference beam-propagation algorithm, we analyze the impact of these nonlinear optical effects on the photolithographic process. Changes of the real part of the refractive index have a considerable impact on dose latitudes, side-walls, swing-curves, iso-dense bias and other process parameters. These effects become more dominant as the thickness of the resist layer increases.