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Hydrodynamic modeling of AlGaN/GaN HEMTs

Hydrodynamische Modellierung von AlGaN/GaN HEMTs
 
: Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.

:

Grasser, T.:
Simulation of Semiconductor Processes and Devices, SISPAD 2007 : September 2007 in Vienna, Austria
Wien: Springer, 2007
ISBN: 978-3-211-72860-4
ISBN: 3-211-72860-0
S.273-276
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <12, 2007, Vienna>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
electronic; Elektronik; device simulation; Bauelement Simulation; HEMT; GaN; Monte Carlo; hydrodynamic; hydrodynamisch

Abstract
For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC) simulation data and measured DC and AC characteristics of AlGaN/GaN HEMTs.

: http://publica.fraunhofer.de/dokumente/N-67109.html