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Lattice-matched GaInAsSb on GaSb for TPV cells

: Welser, E.; Dimroth, F.; Ohm, A.; Guter, W.; Siefer, G.; Philipps, S.; Schöne, J.; Polchroniadis, E.K.; Konidaris, S.; Bett, A.W.


Algora, C.; Corregidor, V. ; American Institute of Physics -AIP-, New York:
Thermophotovoltaic generation of electricity : Seventh World Conference on Thermophotovoltaic Generation of Electricity (TPV7). San Lorenzo de El Escorial, Madrid, Spain, 25 - 27 September 2006
Melville, NY.: AIP, 2007 (AIP conference proceedings 890)
ISBN: 978-0-7354-0392-5
World Conference on Thermophotovoltaic Generation of Electricity (TPV) <7, 2006, Madrid>
Fraunhofer ISE ()

GaInAsSb layers and TPV cells were grown by metalorganic vapor phase epitaxy (MOVPE) on GaSb substrates. GaInAsSb layers show two forms of phase separation, one inclined and the other one perpendicular to the surface. The latter was found to be sensitive to the reactor pressure and correlated to the rotation frequency of the wafers in the AIXTRON-2600G MOVPE reactor. TPV cell structures grown at different growth temperatures, V/III ratios and susceptor rotation frequencies have been investigated. The cells show efficiencies between 0.5 and 1.7% under AM1.5g one-sun illumination conditions. Unfortunately, all cells have a low parallel resistance. The relative External Quantum Efficiency shows no significant difference between cells with different parallel resistance and short-circuit current density. This can be explained either through the inclined phase separation or by crystal defects resulting in a low shunt resistance at the pn-junction.