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Dielectric rear surface passivation for industrial multicrystalline silicon solar cells

: Schultz, O.; Rentsch, J.; Grohe, A.; Glunz, S.W.; Willeke, G.P.

Volltext urn:nbn:de:0011-n-666291 (951 KByte PDF)
MD5 Fingerprint: 7295cec2cc3118975972a1b5e0103f6b
Erstellt am: 29.9.2012

IEEE Electron Devices Society:
IEEE 4th World Conference on Photovoltaic Energy Conversion 2006. Vol.1 : Waikoloa, Hawaii, 7 - 12 May 2006
Piscataway, NJ: IEEE Operations Center, 2006
ISBN: 1-4244-0017-1 (Print)
ISBN: 1-4244-0016-3 (Online)
World Conference on Photovoltaic Energy Conversion (WCPEC) <4, 2006, Waikoloa/Hawaii>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Thermal oxides are commonly used for the production of high-efficiency silicon solar cells from mono- and multicrystalline silicon and have led to the highest conversion efficiencies reported so far. Following the development of high-efficiency cells of small area (1 or 4 cm2) using photolithographic techniques, in the present study large area cells (ges100 cm2) are manufactured employing an industrial front structure. In this paper we present two different passivation schemes for the rear surface of industrial multicrystalline silicon solar cells. The first scheme is a thick thermal oxide grown under wet conditions. The second scheme represents a stack system which comprises the benefits of silicon oxide and silicon nitride layers. In both cases the front surface metallisation is achieved with standard industrial screen-printed silver paste.