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Analysis of the effects caused by parameter inhomogeneity with a 2D modelling tool based on circuit simulation

: Köber, M.; Hermle, M.; Isenberg, J.; Kasemann, M.; Cardenes, H.; Warta, W.

Volltext urn:nbn:de:0011-n-666059 (327 KByte PDF)
MD5 Fingerprint: 417fbb356c4f77d51f0b74baf80576f7
Erstellt am: 29.9.2012

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In silicon solar cells many parameters may be laterally inhomogeneous, e.g. Rs, Rp and lifetime. In recent years powerful tools for imaging inhomogeneous properties have been established. Examples of measurements show that the potential distribution is a key parameter. A circuit simulation program with input options for several inhomogeneous parameter sets was developed in the European project PORTRAIT. The program is introduced and applications are demonstrated on example situations of parameter inhomogeneities: the potential distribution caused by a severe shunt, the impact of regions of low lifetime beneath the front metallisation, different lifetime distributions for a n-type solar cell with rear side emitter, the impact on the IV parameters when the two parameters lifetime and parallel resistance are inhomogeneous and the fill factor loss caused by finger interruptions. Excellent agreement of the simulated potential distribution resulting from strong shunts with Voc-PL measurements is demonstrated. The experimental observation that higher efficiencies are reached if impurities are concentrated locally instead of widely spread is confirmed. For finger interruptions a strong position dependence of these interruptions was observed.