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Amorphous SiC: Applications for silicon solar cells

: Janz, S.; Reber, S.; Glunz, S.W.

Volltext urn:nbn:de:0011-n-665965 (444 KByte PDF)
MD5 Fingerprint: bdafac591f33f8ac29123b7bb039715f
Erstellt am: 29.9.2012

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

This publication we give an overview of the activities at Fraunhofer ISE investigating SiC as an alternative to SiNx and SiOx. Our first aim was to create a conductive diffusion barrier for our Recrystallized Wafer Equivalent (RexWE). Parameters and characteristics as etch resistance, annealing behaviour (stress development, effusion of hydrogen and dopants), bandgap tuning, p- and n-doping (influence on resistivity) and diffusion behaviour were investigated. Especially the good thermal stability of our layers let us start to optimize SixC1-x as a rear-side surface passivation on p-type silicon. On a PERC structure an open-circuit voltage of 682 mV after firing at 800°C could be achieved. Further photovoltaic applications of this variable layer (single layer or stack) will be discussed.