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Optimisation of laser-fired aluminium emitters for high efficiency n-Type Si solar cells

: Ganek, F.; Hermle, M.; Fleischhauer, B.; Grohe, A.; Schultz, O.; Glunz, S.W.; Willeke, G.

Preprint urn:nbn:de:0011-n-665796 (352 KByte PDF)
MD5 Fingerprint: b0d90529698e4a309d49ae924d1293d9
Erstellt am: 24.1.2009

Poortmans, J. ; European Commission, Joint Research Centre -JRC-:
21st European Photovoltaic Solar Energy Conference 2006. Proceedings. CD-ROM : Proceedings of the international conference held in Dresden, Germany, 4 - 8 September 2006
München: WIP-Renewable Energies, 2006
ISBN: 3-936338-20-5
European Photovoltaic Solar Energy Conference <21, 2006, Dresden>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

In order to investigate the local laser-fired aluminium emitters (LFE), a process recently developed at Fraunhofer ISE, high-efficiency n+np+ back junction solar cells with resistivities of 1, 10 and 100 ohm cm were fabricated. The laser-induced damage was analysed and modelled using a two-dimensional DESSIS simulation. The injection-dependent Shockley-Read-Hall recombination in the direct vicinity of the local back-junction is believed to strongly influence the cell erformance and cause large cell performance differences for different resistivity cells. Optimisation of the distance of laser-fired emitter points was performed. The importance of the annealing step following laser processing is shown. Effective excess carrier lifetimes of the 100 ohm cm FZ n-type Si up to 18 ms are reported.