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Surface passivation of silicon solar cells using amorphous silicon carbide layers

 
: Glunz, S.W.; Janz, S.; Hofmann, M.; Roth, T.; Willeke, G.

:
Volltext urn:nbn:de:0011-n-665676 (161 KByte PDF)
MD5 Fingerprint: 7ee23b54b21b90ad405d61ee1cca2d17
Erstellt am: 11.10.2012


IEEE Electron Devices Society:
IEEE 4th World Conference on Photovoltaic Energy Conversion 2006. Vol.1 : Waikoloa, Hawaii, 7 - 12 May 2006
Piscataway, NJ: IEEE Operations Center, 2006
ISBN: 1-4244-0017-1 (Print)
ISBN: 1-4244-0016-3 (Online)
S.1016-1019
World Conference on Photovoltaic Energy Conversion (WCPEC) <4, 2006, Waikoloa/Hawaii>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

Abstract
Dielectric layers for the passivation of solar cell surfaces are a crucial component of future cell generations. Not only their electrical and optical properties are of importance but also the implementation into an industrial cell process. In this regard an easy preconditioning of the surface, low process temperature and high thermal stability are essential. Therefore, we have developed a new passivation process based on PECVD deposited SiCx. The cleaning of the surface was performed in-situ in the plasma chamber. Excellent passivation quality (S<5 cm/s) was achieved even though no additional wet chemistry cleaning was applied. Although the deposition temperature is in the range of 300-400 degC, high thermal stability could be demonstrated. A solar cell structure with SiCx as rear surface passivation exhibited an implied open-circuit voltage of 679 mV after a firing step of 800 degC. Cells using a single SiCx layer and laser-fired contacts as rear surface structure have shown very high efficiencies of 20.2%.

: http://publica.fraunhofer.de/dokumente/N-66567.html