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CMOS Silicon-on-Insulator technology: An alternative for NIR quantum efficiency enhanced CMOS imaging pixel detectors

 
: Durini, D.; Enowbi, K.E.; Brockherde, W.; Hosticka, B.J.

European Optical Society -EOS-:
EOS Conference on Frontiers in Electronic Imaging 2007 : Munich, Germany, from June 18 to 21, 2007
Hannover: EOS, 2007
ISBN: 978-3-00-020990-1
S.26-27
Conference on Frontiers in Electronic Imaging <2007, München>
Englisch
Konferenzbeitrag
Fraunhofer IMS ()
Charge injection; time-compression amplification; SOI-Technologie; pixel array; CMOS-Technik

Abstract
An experimental comparison between Time-Compression (TC) photogate pixel detectors fabricated in both, Silicon-on-Insulator (SOI) CMOS and 0.5µm standard CMOS processes, respectively, are presented to illustrate the convencience of using separated detection and readout regions integrated on a same CMOS imaging pixel.

: http://publica.fraunhofer.de/dokumente/N-66109.html