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Metamorphic H-band low-noise amplifier MMICs

Metamorpher Feldeffekttransistor mit hoher Elektronenbeweglichkeit (MHEMT)
 
: Tessmann, A.; Leuther, A.; Massler, H.; Bronner, W.; Schlechtweg, M.; Weimann, G.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE MTT-S, International Microwave Symposium Digest 2007. CD-ROM : 3-8 June 2007, Honululu/Hawai
Piscataway, NJ: IEEE, 2007
ISBN: 1-4244-0688-9
S.353-356
International Microwave Symposium Digest <2007, Honolulu/Hawai>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
metamorphic high electron mobility transistor; metamorpher Transistor mit hoher Elektronenbeweglichkeit; MHEMT; low-noise amplifier (LNA); rauscharmer Verstärker; millimeter-wave monolithic integrated circuit; monolithisch integrierte Millimeterwellenschaltung; MMIC; H-band; conductor-backed coplanar waveguide; komplanarer Wellenleiter mit Rückseitenmetallisierung; CBCPW

Abstract
In this paper, we present the development of H-band (220 - 325 GHz) low-noise amplifier MMICs for use in next generation high-resolution imaging systems. The amplifier circuits have been realized using an advanced 70-nm InAlAs/InGaAs based metamorphic high electron mobility transistor (MHEMT) technology. Furthermore, airbridge type transmission lines (ABTL) and conductor-backed coplanar circuit topology (CBCPW) were applied, leading to a compact chip size and excellent gain performance at high millimeter-wave frequencies. A realized four-stage ABTL low-noise amplifier circuit exhibited a small-signal gain of more than 18 dB between 216 and 238 GHz, while a four-stage coplanar LNA MMIC achieved a linear gain of 15 dB at 225 GHz and more than 12 dB over the bandwidth from 217 to 245 GHz.

: http://publica.fraunhofer.de/dokumente/N-64998.html