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Mechanisms of ohmic contact formation of Ti/Al-based metal stacks on p-doped 4H-SiC

: Kocher, M.; Rommel, M.; Michalowski, P.; Erlbacher, Tobias

Volltext ()

Materials 15 (2022), Nr.1, Art. 50, 9 S.
ISSN: 1996-1944
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()
4H-SiC; ohmic contact; SIMS; simulation; Ti3SiC2

Ohmic contacts on p-doped 4H-SiC are essential for the fabrication of a wide range of power electron devices. Despite the fact that Ti/Al based ohmic contacts are routinely used for ohmic contacts on p-doped 4H-SiC, the underlying contact formation mechanisms are still not fully under-stood. TLM structures were fabricated, measured and analyzed to get a better understanding of the formation mechanism. SIMS analyses at the Ti3SiC2-SiC interface have shown a significant increase of the surface near Al concentration. By using numerical simulation it is shown that this additional surface near Al concentration is essential for the ohmic contact formation.