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Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function

 
: Guo, X.; Ma, X.; Müller, F.; Olivo, R.; Wu, J.; Ni, K.; Kämpfe, T.; Liu, Y.; Yang, H.; Li, X.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 47th European Solid State Circuits Conference, ESSCIRC 2021 : On Line Proceedings, September 6 - 9, 2021
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-6654-3752-3
ISBN: 978-1-6654-3751-6
S.119-122
European Solid State Circuits Conference (ESSCIRC) <47, 2021, Online>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
This paper investigates reconfigurable physical unclonable function (PUF) design by exploiting the polarization switching variation and stochasticity in ferroelectric field-effect-transistors (FeFETs). The proposed PUFs include 1-transistor/cell (1T/C) and 2T/C designs. The denser 1T/C PUF splits random ‘0’ and ‘1’ states using a tactically pre-defined reference. The 2T/C PUF needs no dedicated references and obtains unbiased random states by differentiating two FeFETs under a proposed sensing error cancellation scheme. Experimental measurements have shown the uniform randomness, uniqueness, repeatability and reconfigurability of the response. Further simulations using an experimentally calibrated multi-domain FeFET model show high energy efficiency and robustness on design parameters.

: http://publica.fraunhofer.de/dokumente/N-642853.html