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The effect of temperature on the ferroelectric properties of Hafnium Zirconium Oxide MFM thin-film varactors

 
: Abdulazhanov, S.; Lederer, M.; Lehninger, D.; Ali, T.; Olivo, R.; Kämpfe, T.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE International Symposium on Applications of Ferroelectrics, ISAF 2021. Conference Proceedings : International Symposium on Integrated Functionalities (ISIF), Piezoresponse Force Microscopy Workshop (PFM), Virtual Conference, May 16-21, 2021
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-6654-4712-6
ISBN: 978-1-6654-0444-0
S.168-171
International Symposium on Applications of Ferroelectrics (ISAF) <2021, Online>
International Symposium on Integrated Functionalities (ISIF) <2021, Online>
Piezoresponse Force Microscopy Workshop (PFM) <2021, Online>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
In this work, the tuning properties of hafnium zirconium oxide (HZO) metal-ferroelectric-metal (MFM) thin film varactors are investigated. It is shown that varactors with 1:1 Hf:Zr stoichiometry and 10 nm thickness, crystallized with rapid thermal annealing (RTA) at 400°C for 60 s, show a maximum capacitance tunability of 32% at room temperature without electric field pre-cycling. The cycling and accompanying wake-up effect lead to a reduction of tunability. Furthermore, the influence of the temperature on the ferroelectric properties and tunability is explored. Upon increase of measurement temperature to 200°C, the maximum tunability decreases to 24%. An elevated temperature leads to an increase in aniferroelectric-like (AFE) behavior, which is consistent with recent studies of ferroelastic nature of AFE switching.

: http://publica.fraunhofer.de/dokumente/N-642703.html