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Silver- and Silver-Hydrogen-Related Defects in Silicon

: Gwozdz, K.; Kolkovsky, V.

Volltext ()

Physica status solidi. A 218 (2021), Nr.23, Art. 2100217, 5 S.
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IPMS ()

Herein, the electrical and structural properties of Ag- and AgH-related defects in n- and p-type Si are reinvestigated using conventional deep-level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. It is evidenced that a peak corresponding to substitutional Ag does not always appear in as-grown Si and additional heat treatments are necessary to observe this defect. Several AgH-related peaks, which were not previously reported in the literature, are observed in hydrogenated n- and p-type Si. The electrical properties of these defects are determined and their origin is discussed. By using high-resolution Laplace DLTS, the depth profiles of AgH-related defects previously assigned to AgSH and AgSH2 are analyzed, and their assignments are questioned.