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RF-Characterization of HZO Thin Film Varactors

: Abdulazhanov, S.; Le, Q.H.; Huynh, D.K.; Wang, D.; Lederer, M.; Olivo, R.; Mertens, K.; Emara, J.; Kämpfe, T.; Gerlach, G.

Volltext ()

Crystals 11 (2021), Nr.8, Art. 980, 9 S.
ISSN: 2073-4352
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IPMS ()

A microwave characterization at UHF band of a ferroelectric hafnium zirconium oxide metal-ferroelectric-metal (MFM) capacitors for varactor applications has been performed. By using an impedance reflectivity method, a complex dielectric permittivity was obtained at frequencies up to 500 MHz. Ferroelectric Hf0.5Zr0.5O2 of 10 nm thickness has demonstrated a stable permittivity switching in the whole frequency range. A constant increase of the calculated dielectric loss is observed, which is shown to be an effect of electric field distribution on highly resistive titanium nitride (TiN) thin film electrodes. The C-V characteristics of a “butterfly” shape was also extracted, where the varactors exhibited a reduction of capacitance tunability from 18.6% at 10 MHz to 15.4% at 500 MHz.