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Hybrid integrated silicon nitride lasers

: Epping, J.P.; Leinse, A.; Oldenbeuving, R.M.; Visscher, I.; Geuzebroek, D.; Geskus, D.; Rees, A. van; Boller, K.J.; Theurer, M.; Möhrle, M.; Schell, M.; Roeloffzen, C.G.H.; Heideman, R.G.


Witzigmann, B. ; Society of Photo-Optical Instrumentation Engineers -SPIE-, Bellingham/Wash.:
Physics and Simulation of Optoelectronic Devices XXVIII : 3-6 February 2020, San Francisco, California, United States
Bellingham, WA: SPIE, 2020 (Proceedings of SPIE 11274)
ISBN: 978-1-5106-3311-7
ISBN: 978-1-5106-3312-4
Paper 112741L, 10 S.
Conference "Physics and Simulation of Optoelectronic Devices" <28, 2020, San Francisco/Calif.>
Fraunhofer HHI ()

Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleX™. By combining the active functionality of InP with the ultra-low loss properties of the TriPleX™ platform narrow linewidth lasers in the C-band are realized. The InP platform is used for light generation and the TriPleX™ platform is used to define a long cavity with a wavelength-selective tunable filter. The TriPleX™ platform has the ability to adapt mode profiles over the chip and is extremely suitable for mode matching to the other platforms for hybrid integration. The tunable filter is based on a Vernier of micro-ring resonators to allow for single-mode operation, tunable by thermo-optic or stress-induced tuning. This work will show the operational principle and benefits of the hybrid lasers and the state of the art developments in the realization of these lasers. High optical powers ( <100 mW) are combined with narrow linewidth (< 1 kHz) spectral responses with tunability over a large (>100 nm) wavelength range and a low relative intensity (< -160 dB/Hz).