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A Novel Dual Ferroelectric Layer Based MFMFIS FeFET with Optimal Stack Tuning Toward Low Power and High-Speed NVM for Neuromorphic Applications

: Ali, T.; Seidel, K.; Kühnel, K.; Rudolph, M.; Czernohorsky, M.; Mertens, K.; Hoffmann, R.; Zimmermann, K.; Mühle, U.; Müller, J.; Houdt, J. van; Eng, L.M.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Symposium on VLSI Technology 2020. Proceedings : 16-19 June 2020, Honolulu, Hawaii, USA
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6461-8
ISBN: 978-1-7281-6460-1
ISBN: 978-1-7281-6459-5
Symposium on VLSI Technology <2020, Honolulu/Hawaii>
Fraunhofer IPMS ()

A Novel MFMFIS FeFET based on dual MFM/MFIS integration in a single gate stack is reported. The external top and bottom contacts, dual ferroelectric (FE) layers, and tailored MFM/MFIS area ratio (AFI) shows flexible stack tuning for improved FeFET performance. A tradeoff between maximized MFM voltage and weaker FET channel inversion is notable in the ID(sat) as AFI decreases. A dual FE layer enables maximized MW and fine control of its size when MFM/MFIS switching contribution is tuned through AFI change. The merits of AFI tuning extends to low voltage switching with maximized MW size and extremely linear current change over a wide dynamic range at high symmetry of synaptic potentiation/depression. Reliability in terms of variability, temperature effects, endurance, and retention is reported. The MFMFIS concept is thoroughly discussed with insight on optimal stack tuning for improved FeFET characteristics.