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Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films

 
: Mart, C.; Viegas, A.; Eßlinger, S.; Czernohorsky, M.; Weinreich, W.; Mutschall, D.; Kaiser, A.; Neumann, N.; Großmann, T.; Hiller, K.; Eng, L.M.

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Institute of Electrical and Electronics Engineers -IEEE-; IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society:
Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020. Symposium Proceedings : Virtual Conference, July 19-23, 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6753-4
ISBN: 978-1-7281-6430-4
S.58-60
International Frequency Control Symposium (IFCS) <2020, Online>
International Symposium on Applications of Ferroelectrics (ISAF) <2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
Nanometer-thin ferroelectric hafnium oxide (HfO 2) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO 2 in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf 0.5 Zr 0.5 O 2 mixed oxide.

: http://publica.fraunhofer.de/dokumente/N-639455.html