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Antiferroelectric Si:HfO2 for High Energy Storage using 3D MIM Capacitors

 
: Viegas, A.; Mart, C.; Czernohorsky, M.

:

Institute of Electrical and Electronics Engineers -IEEE-; IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society:
Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics, IFCS-ISAF 2020. Symposium Proceedings : Virtual Conference, July 19-23, 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6753-4
ISBN: 978-1-7281-6430-4
S.251-253
International Frequency Control Symposium (IFCS) <2020, Online>
International Symposium on Applications of Ferroelectrics (ISAF) <2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
Doped hafnium oxide films show good antiferroelectric (AFE) like properties that can be used for energy storage devices. In this paper, we propose the use of AFE silicon doped HfO2 on a 3D patterned substrate and evaluate its properties such as storage density, efficiency and endurance using different doping levels of silicon and different thicknesses. We show that a 3D substrate plays a key role in the enhancement of the energy storage without any loss in efficiency and endurance compared to planar samples from literature.

: http://publica.fraunhofer.de/dokumente/N-639450.html