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A 500 mV, 4.5 mW, 16 GHz VCO with 33.3% FTR, designed for 5G applications

 
: Kumar, P.; Stajic, D.; Böhme, E.; Isa, E.N.; Maurer, L.

:

Nurmi, J. ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Circuits and Systems Society:
IEEE Nordic Circuits and Systems Conference, NorCAS 2020 : Oslo, Norway, 27-28 October 2020, virtual
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-9227-7
ISBN: 978-1-7281-9226-0
S.139-147
Nordic Circuits and Systems Conference (NorCAS) <6, 2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer EMFT ()

Abstract
In this paper, we present the design methodology and measurement results of a low-power, ultra-wide range Voltage Controlled Oscillator (VCO), with frequency range varying from 13.1-18.4 GHz. The design is fabricated in the 22-nm fully depleted Silicon-on-Insulator (FDSOI) CMOS technology from Globalfoundaries. The VCO is interfaced with a cascode buffer. The physical insights of the super-low-threshold-voltage transistors with adaptive back-gate-biasing is used in the design implementation. The fabricated chip is characterized on the wafer-probe station using manual and automated measurements. The VCO exhibits a frequency-tuning ratio (FTR) of 33.3 % and a power consumption of ≈ 4.5 mW with a supply voltage of 500 mV and back gate bias voltage of 500 mV.

: http://publica.fraunhofer.de/dokumente/N-639321.html