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A novel hybrid high-speed and low power antiferroelectric HSO boosted charge trap memory for high-density storage

: Ali, T.; Mertens, K.; Olivo, R.; Rudolph, M.; Oehler, S.; Kühnel, K.; Lehninger, D.; Müller, F.; Lederer, M.; Hoffmann, R.; Schramm, P.; Biedermann, K.; Kia, A.M.; Metzger, J.; Binder, R.; Czernohorsky, M.; Kämpfe, T.; Müller, J.; Seidel, K.; Houdt, J.V. van; Eng, L.M.


Datta, S. ; Institute of Electrical and Electronics Engineers -IEEE-:
66th IEEE International Electron Devices Meeting, IEDM 2020 : Held virtually, December 12-18, 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-8889-8
ISBN: 978-1-7281-8888-1
International Electron Devices Meeting (IEDM) <66, 2020, Online>
Fraunhofer IPMS ()

We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (<; 1μs), 10 years retention, and 10 5 endurance are reported. The HSO/HZO with tailored (FE,AFE) hysteresis are explored for low power and high-speed-boosted CT memory.