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A novel hybrid high-speed and low power antiferroelectric HSO boosted charge trap memory for high-density storage

 
: Ali, T.; Mertens, K.; Olivo, R.; Rudolph, M.; Oehler, S.; Kühnel, K.; Lehninger, D.; Müller, F.; Lederer, M.; Hoffmann, R.; Schramm, P.; Biedermann, K.; Kia, A.M.; Metzger, J.; Binder, R.; Czernohorsky, M.; Kämpfe, T.; Müller, J.; Seidel, K.; Houdt, J.V. van; Eng, L.M.

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Datta, S. ; Institute of Electrical and Electronics Engineers -IEEE-:
66th IEEE International Electron Devices Meeting, IEDM 2020 : Held virtually, December 12-18, 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-8889-8
ISBN: 978-1-7281-8888-1
S.18.3.1-18.3.4
International Electron Devices Meeting (IEDM) <66, 2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IPMS ()

Abstract
We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (<; 1μs), 10 years retention, and 10 5 endurance are reported. The HSO/HZO with tailored (FE,AFE) hysteresis are explored for low power and high-speed-boosted CT memory.

: http://publica.fraunhofer.de/dokumente/N-639250.html