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A GaN-based active diode circuit for low-loss rectification

 
: Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver

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Institute of Electrical and Electronics Engineers -IEEE-:
33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 : May 30 - June 3, 2021, Nagoya, Full Virtual Conference
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-8985-7
ISBN: 978-4-88686-422-2
S.59-62
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <33, 2021, Online>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
active diode; synchronus rectifier; gallium nitride; self-driven HEMT; reverse diode

Abstract
This work investigates a new approach of an active diode circuit. The concept is applied in a high-voltage GaN-on-Si Technology with p-GaN gate module. The GaN-based active diode includes a simple control with voltage zero detection. A significantly reduced forward voltage of the active diode is demonstrated in a half-wave rectification (230 VAC, 50 Hz). Compared with a diode in the same technology, a forward voltage reduction of 75% (from a forward current of 1A) is achieved and compared with other commercial diode types, a reduction of 33% (from an area-scaled forward current of 0.5 – 1 A/mm 2 ) is achieved. At higher frequencies and at lower AC voltages, the active diode also shows an improved performance compared to conventional rectifier diodes. Thus, this concept offers an enormous potential for low-loss rectification and is suitable for a monolithic integration.

: http://publica.fraunhofer.de/dokumente/N-638813.html