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Characteristics of hetero-integrated GaN-HEMTs on CMOS technology by micro-transfer-printing

 
: Reiner, Richard; Lerner, Ralf; Waltereit, Patrick; Hansen, Nis Hauke; Mönch, Stefan; Fecioru, Alin; Gomez, David

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Institute of Electrical and Electronics Engineers -IEEE-:
33rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2021 : May 30 - June 3, 2021, Nagoya, Full Virtual Conference
Piscataway, NJ: IEEE, 2021
ISBN: 978-1-7281-8985-7
ISBN: 978-4-88686-422-2
S.323-326
International Symposium on Power Semiconductor Devices and ICs (ISPSD) <33, 2021, Online>
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
16ES0670; MIIMOSYS
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
GaN-on-CMOS; micro Transfer Printing; hetero-integration; hybrid integration; chiplet; die-attach; wafer transfer processing

Abstract
This work reports on the progress of the hetero-integration of GaN-HEMTs on CMOS wafers by micro-transfer-printing (μTP). 200 V and 600 V class device types are successfully transferred from a GaN-on-Si source wafer to a processed CMOS target wafer. Technologies and process steps of the micro-transfer-printing are briefly discussed. Both device types are characterized, before micro-transfer-printing on the original Si substrate, and after micro-transfer-printing on the CMOS wafer. The comparison discloses the impact of the micro-transfer-print process on the electrical performance.

: http://publica.fraunhofer.de/dokumente/N-638812.html