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Atmospheric pressure plasma pre-treatment of ALD-Al₂O₃ for low-temperature direct bonding

Abstract
 
: Eichler, Marko; Nagel, Krees; Graumann, Tobias; Thomas, Michael; Gabriel, Markus; Klages, Claus-Peter

Knechtel, Roy (Hrsg.); Eichler, Marko (Hrsg.) ; Fraunhofer-Institut für Schicht- und Oberflächentechnik -IST-, Braunschweig:
WaferBond 2013, Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration : 5th-6th December 2013, Stockholm/Sweden, Book of abstracts
Stockholm: KTH, 2013
S.85-86
Conference on Wafer Bonding for Microsystems, 3D- and Wafer Level Integration (WaferBond) <2013, Stockholm>
Englisch
Konferenzbeitrag
Fraunhofer IST ()

Abstract
This paper presents results of investigations of the bonding behaviour of ALD-Al₂O₃ coated silicon wafers. Before bonding, the coated wafers were activated with atmospheric-pressure plasma to increase the bonding strength. Furthermore, the influence of plasma activation prior ALD-Al₂O₃ coating, and the effect of various ALD layer thickness was examinated.

: http://publica.fraunhofer.de/dokumente/N-638524.html