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1D p-n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One-Pot Chemical Vapor Deposition Synthesis

: Najafidehaghani, E.; Gan, Z.; George, A.; Lehnert, T.; Ngo, G.Q.; Neumann, C.; Bucher, T.; Staude, I.; Kaiser, D.; Vogl, T.; Hübner, U.; Kaiser, U.; Eilenberger, F.; Turchanin, A.

Volltext ()

Advanced Functional Materials 31 (2021), Nr.27, Art. 2101086, 9 S.
ISSN: 1616-301X
ISSN: 1616-3028
Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IOF ()
2D devices; lateral heterostructures; light-emitting diode; p-n junction; transition metal dichalcogenides monolayers

Lateral heterostructures of dissimilar monolayer transition metal dichalcogenides provide great opportunities to build 1D in-plane p–n junctions for sub-nanometer thin low-power electronic, optoelectronic, optical, and sensing devices. Electronic and optoelectronic applications of such p–n junction devices fabricated using a scalable one-pot chemical vapor deposition process yielding MoSe2-WSe2 lateral heterostructures are reported here. The growth of the monolayer lateral heterostructures is achieved by in situ controlling the partial pressures of the oxide precursors by a two-step heating protocol. The grown lateral heterostructures are characterized structurally and optically using optical microscopy, Raman spectroscopy/microscopy, and photoluminescence spectroscopy/microscopy. High-resolution transmission electron microscopy further confirms the high-quality 1D boundary between MoSe2 and WSe2 in the lateral heterostructure. p–n junction devices are fabricated from these lateral heterostructures and their applicability as rectifiers, solar cells, self-powered photovoltaic photodetectors, ambipolar transistors, and electroluminescent light emitters are demonstrated.