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Passivating Poly-Si Tunnel Junctions with Oxide-based Diffusion Barriers for Interconnection in Perovskite/Si Tandem Solar Cells

Paper presented at International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021, Online, Germany, 19.-22.04.2021
: Penn, M.; Luderer, C.; Reichel, C.; Goldschmidt, J.C.; Feldmann, F.; Bivour, M.; Hermle, M.

Volltext urn:nbn:de:0011-n-6354981 (318 KByte PDF)
MD5 Fingerprint: 82874ceaa3afe9e56ee9a8efd2398878
Erstellt am: 6.8.2021

2021, 4 S.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <11, 2021, Online>
Vortrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Si-Bottomzellen für Tandemphotovoltaik

This work aims for providing a low-resistive passivating polycrystalline Si tunnel junction (poly-Si TJ) for interconnecting the sub cells in Perovskite/Si tandem solar cells. To oppose the diffusion of dopant atoms during high-temperature processing, the incorporation of an additional diffusion blocking interlayer between the n+ and p+ poly-Si region of the tunnel junction is proposed. Several oxide-based interlayers have been investigated and are here discussed with respect to their deposition technique and structural properties. With the help of such interlayers, the design freedom for passivating poly-Si TJs is highly increased. The interlayers enhance the temperature stability of the layer stack and enable contact resistivities sufficiently low for tandem device application after high-temperature treatments at up to 900 or 950 °C. The poly-Si TJ is thereby compatible with the rear contact formation of the mainstream passivated emitter rear cell (PERC) technology.