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2021
Journal Article
Title

Growth defects in heteroepitaxial diamond

Abstract
In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs.
Author(s)
Lebedev, Vadim  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Engels, Jan  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kustermann, Jan  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weippert, Jürgen  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Cimalla, Volker  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kirste, Lutz  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Giese, Christian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quellmalz, Patricia  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Graff, Andreas  
Meyer, Frank  
Höfer, Markus  
Sittinger, Volker  
Journal
Journal of applied physics  
Open Access
DOI
10.1063/5.0045644
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS  
Fraunhofer-Institut für Schicht- und Oberflächentechnik IST  
Fraunhofer-Institut für Werkstoffmechanik IWM  
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