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Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches

Diffusion und Deaktivierung von Arsen in Silicium: Vereinigung von atomistischen und Kontinuumssimulationsansätzen
: Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.


Grasser, T.:
Simulation of Semiconductor Processes and Devices, SISPAD 2007 : September 2007 in Vienna, Austria
Wien: Springer, 2007
ISBN: 978-3-211-72860-4
ISBN: 3-211-72860-0
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <12, 2007, Vienna>
Fraunhofer IISB ()
arsenic; activation; segregation; silicon; simulation

Possible arrangements of As in bulk Si have been investigated using ab initio calculations to establish the most stable configurations depending on As concentration and charge state. Consistently with these results we developed a continuous model for As activation and diffusion in Si. The model was implemented in the Sentaurus Process Simulator and calibrated using a wide range of experimental results available in the literature. It was independently tested for spike and flash annealing experiments with excellent results.