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Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction

: Liu, D.; Cho, S.J.; Hardy, A.; Kim, J.; Herrera-Rodriguez, C.J.; Swinnich, E.; Baboli, M.A.; Gong, J.; Konstantinou, X.; Papapolymerou, J.; Mohseni, P.K.; Becker, M.; Seo, J.-H.; Albrecht, J.D.; Grotjohn, T.; Ma, Z.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 : 3-6 November 2019, Nashville
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-0586-4
ISBN: 978-1-7281-0587-1
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)<2019, Nashville/Tenn.>
Fraunhofer CCD ()

We demonstrated GaAs/diamond (GaAs-C sp3 ) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/C sp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/C sp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/C sp3 HBTs in the future.