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Nonlinear electronic transport and device performance of HEMTs

Über nichtlinearen Elektronentransport und Leistungsvermögen von HEMTs
: Quay, R.; Hess, K.; Reuter, R.; Schlechtweg, M.; Grave, T.; Palankovski, V.; Selberherr, S.


IEEE transactions on electron devices 48 (2001), Nr.2, S.210-217
ISSN: 0018-9383
Fraunhofer IAF ()
electron emission; Elektronenemission; equivalent circuits; MODFET; semiconductor heterojunction; simulation; simulation software; thermic emission

We assess the impact of nonlinear electronic transport and, in particular, of real space transfer (RST) on device performance for advanced III/V high electron mobility transistors (HEMTs) using the device simulator MINIMOS-NT. In this context, we discuss dc and RF performance issues for pseudomorphic AlGaAs/InGaAs/GaAs HEMTs that are especially relevant for gate-lengths of about 150 nm. All results are compared to and found to be consistent with experimental data for devices processed in tow different foundries.