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On a computationally efficient approach to Boron-interstitial clustering

Über einen recheneffizienten Ansatz zur Beschreibung von Bor-Eigenzwischengitteratomcluster
 
: Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.

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TU München; IEEE Electron Devices Society:
ESSDERC 2007, 37th European Solid-State Device Research Conference : September 10-14, 2007, Munich, Germany
Piscataway: IEEE, 2007
ISBN: 1-4244-1123-8
S.342-345
European Solid State Device Research Conference (ESSDERC) <37, 2007, München>
Englisch
Konferenzbeitrag
Fraunhofer IISB ()
boron; clustering; silicon; BIC

Abstract
The physical concepts developed to describe the transient activation of boron during post-implantation annealing are based on the concurrent formation of complexes comprising boron atoms and self-interstitials. A complete implementation into TCAD software leads to a high number of equations to be solved which is often inadmissible for multi-dimensional simulations. In this work, a minimum number of such complexes is taken into considerations. We show that such a model is nevertheless able to reproduce a large variety of implant and annealing conditions.

: http://publica.fraunhofer.de/dokumente/N-62514.html