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Broadband High-Efficiency Power Amplifiers in 150 nm AlGaN/GaN Technology at Ka-Band

 
: Samis, Stanislav; Friesicke, Christian; Maier, Thomas; Quay, Rüdiger; Jacob, A.F.

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Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Asia-Pacific Microwave Conference, APMC 2020. Proceedings : Celebrate the Past, Engineering the Future, 8-11 December 2020, Hong Kong, Virtual Conference
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6963-7
ISBN: 978-1-7281-6961-3
ISBN: 978-1-7281-6962-0
S.260-262
Asia-Pacific Microwave Conference (APMC) <2020, Online>
Englisch
Konferenzbeitrag
Fraunhofer IAF ()
power amplifier; Ka-Band; MMIC; gallium nitride; satellite communication

Abstract
This paper reports the realization and measurements of two power amplifier MMICs at Ka-band. Both MMICs were manufactured using an industrial 0.15 μ m AlGaN/GaN HEMT technology. The power amplifiers MMIC1 and MMIC2 are three-stage designs utilizing a total gate width (TGW) of 5.12 mm and 10.24 mm, respectively. In order to maximize the efficiency, the MMICs exhibit a staging ratio of 1: 2: 6.4. The measurements demonstrate for MMIC18-10.5 W of output power with 28-32% of power-added efficiency (PAE) between 25 and 29 GHz, i.e., over a fractional bandwidth of 15%. In the same frequency band, MMIC2 exhibits more than 15 W of output power and 25% of PAE. The best performance for MMIC2 was measured at 27 GHz and reaches 20 W associated with a PAE of 27%.

: http://publica.fraunhofer.de/dokumente/N-624987.html