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Advances in Epitaxial GaInP/GaAs/Si Triple Junction Solar Cells

 
: Feifel, M.; Lackner, D.; Ohlmann, J.; Volz, K.; Hannappel, T.; Benick, J.; Hermle, M.; Dimroth, F.

:
Postprint urn:nbn:de:0011-n-6248949 (462 KByte PDF)
MD5 Fingerprint: f2aa325ac3a3e0dcabf7caf5a53097db
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Erstellt am: 26.2.2021

Präsentation urn:nbn:de:0011-n-624894-14 (1.5 MByte PDF)
MD5 Fingerprint: e23b1dd1376bad1df1acbd459e11ad2b
Erstellt am: 27.2.2021


Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
S.194-196
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Englisch
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; III-V- und Konzentrator-Photovoltaik; Dotierung und Diffusion; III-V Epitaxie und Solarzellen

Abstract
Epitaxial III-V on silicon multi-junction solar cells allow to increase the conversion efficiency of single-junction silicon devices. We report progress on the development of high-efficiency GaInP/GaAs/Si triple-junction devices over the last two years. The AM1.5g conversion efficiency has been increased from 19.7% to 22.3%, 24.3%, and finally a value of 25.9% could be achieved. The improvement was enabled by a reduction of nucleation-related crystal defects in the silicon to gallium phosphide transition and a reduction of parasitic absorption within the metamorphic GaAsP buffer structure which was limiting the current in the silicon subcell. By increasing the bandgaps in the graded buffer structure, a ∼2x reduction of the threading dislocation density was observed and the short-circuit current density increased by 22% relative. A majority barrier was identified and could be suppressed to obtain a new record conversion efficiency of 25.9% with an open-circuit voltage of 2.647 V, a short-circuit current density of 12.2 mA/cm 2 and a fill factor of 80.2%.

: http://publica.fraunhofer.de/dokumente/N-624894.html