Publica
Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten. GaN HEMTs. The benefits of far higher voltages
| Compound Semiconductor 26 (2020), Nr.4, S.44-48
ISSN: 1096-598X |
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| Englisch |
| Zeitschriftenaufsatz, Elektronische Publikation |
| Fraunhofer IAF () |
Abstract
Doubling the supply voltage of an RF GaN HEMT increases its power per die area and enables a substantial reduction in the size of very-high-power systems.