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Full Waveguide E- and W-Band Fundamental VCOs in SiGe:C Technology for Next Generation FMCW Radars Sensors

: Bredendiek, C.; Aufinger, K.; Pohl, N.


European Microwave Association:
14th European Microwave Integrated Circuits Conference, EuMIC 2019 : 30 September-1 October 2019, Paris, France
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-0768-4
ISBN: 978-2-87487-056-9
European Microwave Integrated Circuits Conference (EuMIC) <14, 2019, Paris>
European Microwave Week (EuMW) <2019, Paris>
Fraunhofer FHR ()

This paper presents ultra-wideband fundamental VCOs in a automotive qualified production SiGe:C hetero bipolar technology with an f T of 240GHz and f max of 380GHz. The architecture of the VCOs is a fully differential topology based on a merge of the classic Colpitts- and Clapp-topologies. The VCOs are designed for a continuous tuning range to cover one full millimeter-waveguide band. The goal of this particular work is to encompass the full E- and W-Band, respectively. The fabricated chips also integrate the high-frequency part of a divide-by-8 prescaler for stabilization in a PLL also covering the whole W-Band with up to 110 GHz efficiently. Both VCOs facilitate a peak output power of 7dBm in their respective band at the differential output. The phase noise at 1MHz offset is -99dBc/Hz for the E-Band and -93dBc/Hz for the W-Band VCO at center frequency. The continuous tuning range is 31 GHz (40.1%) in the E-Band and 35.4 GHz (38.6%) in the W-Band. The characteristics are only slightly degrading even at 100° C. Only 215mW of power is consumed by the chips from a single 3.3V supply.