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Accurate parameter extraction for the simulation of direct structuring by ion beams

: Beuer, S.; Rommel, M.; Lehrer, C.; Platzgummer, E.; Kvasnica, S.; Bauer, A.J.; Ryssel, H.

Postprint urn:nbn:de:0011-n-620269 (1.6 MByte PDF)
MD5 Fingerprint: 65e5d8a0e5b1728e5b4f359cda0823cf
Erstellt am: 26.8.2010

Bausells, J.:
32nd International Conference Micro- and Nano-Engineering 2007. Proceedings : 17 - 20 September 2006, Barcelona, Spain; MNE 2006
Amsterdam: Elsevier, 2007 (Microelectronic engineering 84.2007, Nr.5/8)
ISSN: 0167-9317
International Conference on Micro- and Nano-Engineering (MNE) <32, 2006, Barcelona>
Konferenzbeitrag, Zeitschriftenaufsatz, Elektronische Publikation
Fraunhofer IISB ()

In this work, methods for an accurate extraction of parameters for the simulation of nanoscaled structuring by focused ion beams will be discussed. For this purpose the quantitative understanding of the underlying effects (i.e. redeposition of sputtered atoms, the dependence of sputter yield on the angle of incidence, and the influence of scattered ions) is obligatory. Parameter values obtained from experiment and simulation will be compared and successfully be applied for the simulation of sputtered 2D structures.