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Power Cycling of SiC-MOSFET Single-Chip Modules with Additional Measurement Cycles for Life End Determination

: Wagner, F.; Reber, G.; Rittner, M.; Guyenot, M.; Nitzsche, M.; Wunderle, B.

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin:
CIPS 2020, 11th International Conference on Integrated Power Electronics Systems. Proceedings : March, 24 - 26, 2020, Berlin, Germany; CD-ROM
Berlin: VDE-Verlag, 2020 (ETG-Fachbericht 161)
ISBN: 978-3-8007-5225-6
ISBN: 978-3-8007-5226-3
ISBN: 3-8007-5225-5
International Conference on Integrated Power Electronics Systems (CIPS) <11, 2020, Berlin>
Fraunhofer ENAS ()

o meet the trend of the increasing market of SiC-based power electronics, ECPE is under refinement of the AQG324, to adapt reliability and lifetime testing of power modules with Power Cycling Testing (PCT) also for SiC-based power modules. Based on this qualification guideline the end of life (EoL) criteria of the forward voltage drop VDS is discussed with power cycling (PC) results of SiC-MOSFET single-chip modules and it is shown that different lifetime results can be obtained, if VDS is measured accordingly to different measurement and thermal conditions of VDS. Therefore, PC with a main cycle and additional measurement cycles is introduced to measure VDS and the thermal resistance Rth independently from PC and with simple measurement equipment. Using this procedure, three SiC-MOSFET single chip vehicles with different top-side contacts in fact Al-wire, Al-ribbon and AlCu ribbon bonds are compared using a ‘scientific PC’ and measurement cycles to retain EoL criteria.